Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique

Yulianto N., Refino A.D., Syring A., Majid N., Mariana S., Schnell P., Wahyuono R.A., Triyana K., Meierhofer F., Daum W., Abdi F.F., Voss T., Wasisto H.S., Waag A.

Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, Hans-Sommer-Straße 66, Braunschweig, 38106, Germany; Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig, Langer Kamp 6, Braunschweig, 38106, Germany; Research Center for Physics, Indonesian Institute of Sciences (LIPI), Jl. Kawasan Puspiptek No. 441-442, Tangerang, Selatan 15314, Indonesia; Engineering Physics Program, Institut Teknologi Sumatera (ITERA), Jl. Terusan Ryacudu, Way Huwi, Lampung Selatan, Lampung 35365, Indonesia; Institute of Energy Research and Physical Technologies, Technische Universität Clausthal, Leibnizstraße 4, Clausthal-Zellerfeld, 38678, Germany; Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, Berlin, 14109, Germany; Department of Engineering Physics, Institut Teknologi Sepuluh Nopember (ITS), Jl. Arif Rahman Hakim, ITS Campus Sukolilo, Surabaya, 60111, Indonesia; Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Gadjah Mada, Sekip Utara PO Box BLS 21, Yogyakarta, 55281, Indonesia


The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top–down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~107 wires/cm2), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performance and limitations of the fs-LLO technique as well as to gain insights into physical material properties such as strain relaxation and assess the maturity of the transfer process. This work could enable the easy recycling of native growth substrates and inspire the development of large-scale hybrid GaN nanowire optoelectronic devices by solely employing standard epitaxial LED wafers (i.e., customized LED wafers with additional embedded sacrificial materials and a complicated growth process are not required). © 2021, The Author(s).


Microsystems and Nanoengineering

Publisher: Springer Nature

Volume 7, Issue 1, Art No 32, Page – , Page Count

Journal Link: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104864375&doi=10.1038%2fs41378-021-00257-y&partnerID=40&md5=5e79a1dfea08fa65cfe2864997fa1fdc

doi: 10.1038/s41378-021-00257-y

Issn: 20557434

Type: All Open Access, Gold, Green


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